PLATFORM MODULE

Wafer Map Analysis

Spatial pattern recognition on KLARF defect coordinate data. Edge ring, center spot, arc, scratch, and random — classified at defect densities too low for conventional SPC rule violations to fire.

43 ms Per-wafer inference (A30 GPU)
97.3% Pattern classification accuracy
8+ Pattern classes recognized

How the wafer map classifier works.

The wafer map analysis module receives defect coordinate data from KLARF files and bin map exports. It normalizes coordinates to a standard die-grid reference frame, then runs a CNN-based spatial pattern classifier that produces a pattern label, a confidence score, and a set of supporting die coordinates for each wafer.

The classifier distinguishes systematic patterns (edge ring, center spot, arc, scratch) from random defect distributions. Systematic patterns are immediately forwarded to the commonality analysis module for cross-lot equipment attribution. Random distributions are scored against D0 thresholds and trigger yield trend tracking only.

Results are available per-wafer, per-lot, and in fleet-trend aggregations. The output drives the ranked evidence package the yield engineer receives for each excursion event.

ParameterDescriptionValue
Inference timePer wafer on NVIDIA A3043 ms
Inference time (CPU)Per wafer on 32-core server380 ms
Pattern accuracy14nm and below, KLA-class inspectors97.3%
Minimum D0Detection threshold (pattern recognizable)0.03 defects/cm²
Supported formatsKLARF 1.0 / 1.8 / 2.0 + IBIS / HMI CSV
Wafer diametersSupported die-grid calibrations200mm, 300mm
Wafer map output showing edge-ring defect pattern with systematic classification label and confidence score
PATTERN LIBRARY

Eight spatial pattern classes.

Edge Ring

Circular band of elevated defect density 2–8mm from wafer edge. Indicates edge exclusion zone contamination, bevel particle issues, or chuck contact at the edge ring.

Center Spot

Concentrated defect cluster at wafer center. Characteristic of spin-coat non-uniformity, center-high CMP, or electrostatic discharge events at the chuck center pin.

Scratch / Linear

Linear defect track across the wafer surface. Indicates mechanical contact during handling, wafer transport, or a contaminated robot arm end effector.

Arc / Partial Ring

Partial ring or arc pattern consistent with radial non-uniformity in specific quadrants. Common in etch uniformity outliers or gas flow asymmetry in single-wafer chambers.

Hot Spot / Cluster

Localized cluster not at center or edge, correlated to a specific die-coordinate region. Frequently maps to a mask or reticle field defect recurring across repeated exposure fields.

Random

Spatially uncorrelated defect distribution with no detectable pattern. Classified as random and passed to D0 trend tracking rather than equipment attribution analysis.

ANALYSIS PIPELINE

From KLARF file to pattern label.

STEP 01

Coordinate Normalization

KLARF defect coordinates converted to die-grid reference frame. Wafer diameter and die layout from lot traveler. Coordinate system aligned across inspection tools.

STEP 02

Density Map Construction

Defect counts binned to a spatial density grid. Kernel density estimation applied for smooth spatial signal. Background D0 baseline subtracted to highlight excursion-specific signal.

STEP 03

CNN Classifier

Density map passed to the trained CNN classifier. Multi-class output: pattern label + confidence score. Low-confidence outputs flagged for yield engineer review rather than auto-attributed.

STEP 04

Attribution Handoff

Systematic pattern: immediately forwarded to commonality analysis module for cross-lot equipment attribution. Random: added to D0 trend. Mixed: both paths run in parallel.

See your wafer maps classified in minutes.

Bring a representative KLARF file set. We'll run the pattern classifier and show you what it finds — edge ring, scratch, or random — in your first session.